Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Reconfigurable Tunneling Transistors Heterostructured by an Individual Carbon Nanotube and MoS2

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating

Gate Stack Engineering in MoS<sub>2</sub>Field-Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS 2 diode

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Atomic Threshold-Switching Enabled MoS2 Transistors Towards Ultralow-Power Electronics

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Tunable Current Regulative Diode Based on Van Der Waals Stacked MoS2/WSe2 Heterojunction–Channel Field‐Effect Transistor

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors