Abstract:Field-effect transistor (FET) devices with multi-gate coupled structures usually exhibit special electrical properties and are suitable for fabricating multifunctional devices. Among them, the 1D nanowire gate configuration has become a promising gate design to tailor 2D FET performances. However, due to possible short circuiting induced by nanowire contact and the high requirement for precision manipulation, the integration of multi-nanowires as gates in a single 2D electronic system remains a grand challenge. Herein, local laser--thinned multiple core-shell SiC@SiO2 nanowires are successfully integrated into MoS2 transistors as multi-gates for active control of extendable logic applications. Nanowire gates (NGs) locally enhance the carrier transportation, and the use of multiple NGs can achieve designed band structures to tune the performance of the device. For core-shell structures, a semiconducting core is used to introduce a gate bias, and the insulating shell provides protection against short circuiting between NGs, facilitating nanowire assembly. Furthermore, a global control gate is introduced to co-tune the overall electrical characteristics, while active control of logic devices and extendable inputs are achieved based on this model. This work proposes a novel nanowire multi-gate configuration, which provides possibilities for localized, precise control of band structures and the fabrication of highly integrated, multifunctional, and controllable nano-devices.

Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Gate Stack Engineering in MoS<sub>2</sub>Field-Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors

Basic Logic Operations Achieved in a Single 2D WSe 2 Transistor by Surface-Charge-Transfer Doping

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Locally Thinned, Core-Shell Nanowire-Integrated Multi-gate MoS2 Transistors for Active Control of Extendable Logic