Abstract:Ambipolar dual-gate transistors based on two-dimensional (2D) materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with suppressed off-state current. These circuits achieve the same logical output as CMOS with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 10^8 and 10^6, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. For the first time, we demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and polarity gate behavior is conducted, which has previously been lacking. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices are qualitatively analyzed. This work lays the foundation for future developments in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed and more flexible logic circuits.

Basic Logic Operations Achieved in a Single 2D WSe 2 Transistor by Surface-Charge-Transfer Doping

Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping

Doping-free Complementary WSe2 Circuit Via Van Der Waals Metal Integration

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation

Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors

Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power Via Configurable MoS2/WSe2 Gate

Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Van der Waals polarity-engineered 3D integration of 2D complementary logic

A mode-balanced reconfigurable logic gate built in a van der Waals strata

Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022)

Direct Laser Patterning of a 2D WSe2 Logic Circuit

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Direct Laser Patterning of a 2D WSe 2 Logic Circuit

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate.

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Complete Logic Operations in an Ambipolar Tellurium Homojunction Via Non-Invasive Scanning Probe Lithography

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors