Abstract:Two dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary physical properties. The unique properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different types of van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.

Light‐Rewritable Logic Devices Based on Van der Waals Heterostructures

A van der Waals pn heterojunction with organic/inorganic semiconductors

Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide

Logical Integration Device for Two-Dimensional Semiconductor Transition Metal Sulfide

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures

Electrical Polarity Modulation in V‐Doped Monolayer WS2 for Homogeneous CMOS Inverters

Multifunctional High-Performance Van Der Waals Heterostructures.

Van der Waals polarity-engineered 3D integration of 2D complementary logic

Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping

Gate-Controlled Bp-Wse2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics

Independent Band Modulation in 2D Van Der Waals Heterostructures Via a Novel Device Architecture

Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

A Gate-Free Monolayer WSe 2 Pn Diode

Basic Logic Operations Achieved in a Single 2D WSe 2 Transistor by Surface-Charge-Transfer Doping

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics

Van Der Waals Heterostructure Devices with Dynamically Controlled Conduction Polarity and Multifunctionality

Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides