Gate-Controlled Bp-Wse2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics

Dong Li,Biao Wang,Mingyuan Chen,Jun Zhou,Zengxing Zhang

DOI: https://doi.org/10.1002/smll.201603726

IF: 13.3

2017-01-01

Small

Abstract:p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe2) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals.