Abstract:Anti-ambipolar behavior has been observed in multilayer two-dimensional semiconductors and many p–n junctions. However, temperatures in the range of tens of kelvin are usually required, and there are gaps in the understanding of the underlying physics, most notably the roles of the space charge region and van der Waals (vdW) heterojunction. Here, we systematically investigate the unique transport and transfer characteristics of vertically stacked vdW contacted p-WSe2/n-SnS2 and p-WSe2/n-MoS2 junctions. Interestingly, robust anti-ambipolar behavior is observed at low and room temperature for both darkened and illuminated conditions. A peak-to-valley current ratio exceeding 104 and on-state gating field ranging from −0.3 × 106 to 0.57 × 106 V/cm are achieved at room temperature in darkness. Moreover, the rectifying effect and the type of majority charge carrier of the WSe2/SnS2 junction can be tuned by an electric gate. Robust Raman quenching over the whole interface induced by strong charge transfer is also observed. Based on an equivalent circuit model, a Poisson and drift-diffusion simulation, and experiments with local illumination, we highlight the role of the van der Waals heterojunction. We show that the observed unique anti-ambipolar behavior is due to the recombination of electrons and holes at the space charge region rather than carrier diffusion in the turned-off metal-oxide-semiconductor field-effect transistor (MOSFET). A larger vdW barrier and interface recombination at the vdW barrier are key to having a strong on/off ratio especially at room temperature. The p–n vdW heterostructure plays the roles of a complementary MOSFET connecting with a heterojunction diode, not only a ternary logic inverter but also a tunable multiple-gain amplifier in wide-range gating fields. The width of the middle logic plateau can reach 45 V in a WSe2/MoS2 junction.

A Gate-Free Monolayer WSe 2 Pn Diode

A van der Waals pn heterojunction with organic/inorganic semiconductors

Gate tunable WSe2/SnSe2 backward diode with ultrahigh reverse rectification ratio

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide

Reconfigurable single-gate PdSe2/WS2 diode with high symmetry rectification

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide

Lateral Monolayer MoSe2 -Wse2 P-N Heterojunctions with Giant Built-In Potentials.

Optoelectronic Properties of Bottom Gate-Defined In-Plane Monolayer WSe 2 P–n Junction

Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions

Charge Transfer at the Hetero‐Interface of WSe2/InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

Charge Transfer at the Hetero‐Interface of WSe 2 /InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions

A Field-Effect WSe2/Si Heterojunction Diode

Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection

Bidirectional Rectifier with Gate Voltage Control Based on Bi2O2Se/WSe2 Heterojunction

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2 lateral heterostructures

Interface-Induced WSe 2 In-plane Homojunction for High-Performance Photodetection

Gate-Controlled Bp-Wse2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics