Abstract:PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $\mu$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $\mu$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications.

Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

A van der Waals pn heterojunction with organic/inorganic semiconductors

Optoelectronic Properties of Bottom Gate-Defined In-Plane Monolayer WSe 2 P–n Junction

Light Generation and Harvesting in a Van der Waals Heterostructure

Lead Halide Perovskite Sensitized WSe2 Photodiodes with Ultrahigh Open Circuit Voltages

A Gate-Free Monolayer WSe 2 Pn Diode

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe 2 -WSe 2 Homojunction

An Ultrafast Wse2 Photodiode Based On A Lateral P-I-N Homojunction

1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

High‐Performance Optoelectronics: Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance …

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions

High‐Performance Optoelectronics: Lateral 2D WSe2 P–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance Optoelectronics (adv. Mater. 9/2020)

High performance photodetector based on WSe2 p-n homojunction induced by the electron doping from Bi2O2Se

Few-layer WSe 2 Lateral Homo-and Hetero-Junctions with Superior Optoelectronic Performance by Laser Manufacturing

Photodetector Based on Heterostructure of Two-Dimensional WSe2/In2Se3.