Reconfigurable single-gate PdSe2/WS2 diode with high symmetry rectification

Tianhong Chen,Qi Wu,Yuan Gao,Junzhuan Wang,Xiaomu Wang,Xinran Wang,Shancheng Yan,Yi Shi

DOI: https://doi.org/10.1007/s40843-024-2944-0

2024-06-16

Science China Materials

Abstract:Two-dimensional (2D) materials offer an excellent opportunity for constructing reconfigurable electronic devices due to their wide range of material combinations and adjustable band structures. In this study, we successfully develop a single-gate controllable reconfigurable diode employing PdSe 2 /WS 2 van der Waals heterostructures to form a highly symmetric p-n/n-p junction mode. By utilizing a gate-modulated band-to-band tunneling mechanism, we achieve a reverse bias tunneling current equivalent to the forward bias current of the device. Moreover, we obtain a high reverse rectification ratio by controlling the bipolar WS 2 to form a homogeneous n-p junction. By modulating the gate voltage, the device's p-n/n-p junction mode exhibits remarkably symmetric properties, with adjustable rectification ratios ranging from 1E−04 to 1E+04, thus demonstrating its high-performance reconfigurable rectification functionality. Furthermore, a logic inverter is successfully constructed based on the dual-mode rectification ability. This research significantly contributes to the advancement of multifunctional devices utilizing 2D materials.

materials science, multidisciplinary