Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

Muhammad Riaz,Syed Hassan Abbas Jaffery,Zeesham Abbas,Muhammad Hussain,Muhammad Suleman,Sajjad Hussain,Sikandar Aftab,Yongho Seo,Jongwan Jung

DOI: https://doi.org/10.1002/adom.202400038

IF: 9

2024-04-04

Advanced Optical Materials

Abstract:A novel p‐PdSe2/n‐ReSe2 van der Waals heterojunction (HJ) diode is fabricated via dry transfer. Optoelectronic density functional theory calculations provide firm support to the experimental section. The rectification of the PdSe2/ReSe2 diode increases from ≈9 × 101 at Vg = 60 to ≈3.13 × 103 at Vg = −60. Devices perform admirably on the illumination of light. A photo response of 1.7 × 103 A W−1 is attained. The fabrication of van der Waals heterostructures (vdWHs) has drawn considerable interest because of their wide range of functionalities. Herein, a novel PdSe2/ReSe2 vdWHs with gate‐tunable rectification behavior and excellent broadband photodetection characteristics is presented. The application of the gate bias substantially enhances the rectification behavior, with the highest rectification ratio (≈3.13 × 103) observed at gate voltage Vg = −60 V. The density functional theory calculations demonstrate the direct and indirect bandgap behavior of PdSe2 and ReSe2 in the monolayer structure, respectively. Additionally, the PdSe2/ReSe2 heterojunction displays a strong photo‐response in the near‐infrared region and achieves a high photoresponsivity, an excellent external quantum efficiency, and rapid rise and decay times of 1.7 × 103 A W−1, 4.05 × 103, and 5 and 20 ms, respectively. Furthermore, the device exhibits a remarkable detectivity of ≈3.5 × 1012 Jones. The findings hold great potential for advancing the fabrication of multifunctional vdW heterostructure devices.

materials science, multidisciplinary,optics