Abstract:PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $\mu$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $\mu$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications.

Photovoltaic effect in a few-layer ReS2/WSe2 heterostructure

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2 lateral heterostructures

Diverse Atomically Sharp Interfaces And Linear Dichroism Of 1t' Res2-Rese2 Lateral P-N Heterojunctions

Revealing Bipolar Photoresponse in Multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N Diode by Hybrid 2D Contact Engineering

Photovoltaic Efficiency of Transition Metal Dichalcogenides Thin Films by Ab Initio Excited-State Methods

Simulation of electrical rectification effect in two-dimensional MoSe2/WSe2lateral heterostructures

Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Dominating Interlayer Resonant Energy Transfer in Type-II 2D Heterostructure

Electronic and Optoelectronic Applications Based on ReS2

High responsivity phototransistors based on few-layer ReS2 for weak signal detection

Visible to near-infrared photodetector based on SnSe2/WSe2heterojunction with potential application in artificial visual neuron

Lateral Monolayer MoSe2 -Wse2 P-N Heterojunctions with Giant Built-In Potentials.

Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide

Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In2Se3/ReS2 Van Der Waals Heterostructure

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

Anisotropy of two-dimensional ReS2 and advances in its device application