Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

Enze Zhang,Peng Wang,Zhe Li,Haifeng Wang,Chaoyu Song,Ce Huang,Zhigang Chen,Lei Yang,Kaitai Zhang,Shiheng Lu,Weiyi Wang,Shanshan Liu,Hehai Fang,Xiaohao Zhou,Hugen Yan,Jin Zou,Xiangang Wan,Peng Zhou,Weida Hu,Faxian Xiu
DOI: https://doi.org/10.1021/acsnano.6b04165
IF: 17.1
2016-01-01
ACS Nano
Abstract:Atomically thin 2D-layered transition-metal dichalcogenides have been studied extensively in recent years because of their intriguing physical properties and promising applications in nanoelectronic devices. Among them, ReSe2 is an emerging material that exhibits a stable distorted 1T phase and strong in-plane anisotropy due to its reduced crystal symmetry. Here, the anisotropic nature of ReSe2 is revealed by Raman spectroscopy under linearly polarized excitations in which different vibration modes exhibit pronounced periodic variations in intensity. Utilizing high-quality ReSe2 nanosheets, top-gate ReSe2 field-effect transistors were built that show an excellent on/off current ratio exceeding 107 and a well-developed current saturation in the current–voltage characteristics at room temperature. Importantly, the successful synthesis of ReSe2 directly onto hexagonal boron nitride substrates has effectively improved the electron motility over 500 times and the hole mobility over 100 times at low temperature...
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