Fabrication of 1D Te/2D ReS 2 Mixed-Dimensional van der Waals p-n Heterojunction for High-Performance Phototransistor
Jia-Jia Tao,Jinbao Jiang,Shi-Nuan Zhao,Yong Zhang,Xiao-Xi Li,Xiaosheng Fang,Peng Wang,Weida Hu,Young Hee Lee,Hong-Liang Lu,David-Wei Zhang
DOI: https://doi.org/10.1021/acsnano.0c09912
IF: 17.1
2021-02-05
ACS Nano
Abstract:The superior optical and electronic properties of the two-dimensional (2D) rhenium disulfide (ReS<sub>2</sub>) makes it suitable for nanoelectronic and optoelectronic applications. However, the internal defects coupled with with the low mobility and light-absorbing capability of ReS<sub>2</sub> impede its utilization in high-performance photodetectors. Fabrication of mixed-dimensional heterojunctions is an alternative method for designing high-performance hybrid photodetectors. This study proposes a mixed-dimensional van der Waals (vdW) heterojunction photodetector, containing high-performance one-dimensional (1D) <i>p</i>-type tellurium (Te) and 2D <i>n</i>-type ReS<sub>2</sub>, developed by depositing Te nanowires on ReS<sub>2</sub> nanoflake using the dry transfer method. It can improve the injection and separation efficiency of photoexcited electron–hole pairs due to the type II <i>p–n</i> heterojunction formed at the ReS<sub>2</sub> and Te interface. The proposed heterojunction device is sensitive to visible-light sensitivity (632 nm) with an ultrafast photoresponse (5 ms), high responsivity (180 A/W), and specific detectivity (10<sup>9</sup>), which is superior to the pristine Te and ReS<sub>2</sub> photodetectors. As compared to the ReS<sub>2</sub> device, the responsivity and response speed is better by an order of magnitude. These results demonstrate the fabrication and application potential of Te/ReS<sub>2</sub> mixed-dimensional heterojunction for high-performance optoelectronic devices and sensors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c09912?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c09912</a>.Experimental methods, schematic for the fabrication process of Te, ReS<sub>2</sub>, and Te/ReS<sub>2</sub> FET based phototransistors, SEM and optical microscope images of ReS<sub>2</sub> and Te/ReS<sub>2</sub> devices, <i>I</i><sub>ds</sub><i>–V</i><sub>d</sub> curves at <i>V</i><sub>g</sub> of 0 V of Te, ReS<sub>2</sub>, and Te/ReS<sub>2</sub> devices, transfer curve of Te FET measured under dark at <i>V</i><sub>ds</sub> = 1 V, <i>V</i><sub>g</sub><i>–I</i><sub>ds</sub> characteristics of ReS<sub>2</sub> and Te/ReS<sub>2</sub> devices at different light intensity with the wavelength of 632 nm, and <i>I</i><sub>d</sub><i>–V</i><sub>d</sub> of pure Te device under dark conditions and at maximum light intensity of 22.6 mW/cm<sup>2</sup> with the wavelength of 632 nm (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c09912/suppl_file/nn0c09912_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology