High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications

Min Zhang,Han Li,Jing Xu,Hao Zhu,Lin Chen,Qingqing Sun,David Wei Zhang
DOI: https://doi.org/10.1109/led.2018.2881198
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:In this letter, we introduce field-effect transistors (FETs) built with ReS2 on engineered flexible substrate. Excellent electrical behaviors have been obtained including high mobility, low subthreshold swing, and large on/off ratio. The optoelectronics and flexible electronics applications of the ReS2 FETs have been studied. The FET-based photodetector exhibited photoresponsivity up to 25.3 AW−1. Great mechanical properties have also been achieved under various strain conditions. Such excellent performance is comparable to the well-developed Si-based devices and is due to the remarkable inherent material properties of ReS2 and optimized device structure engineering on flexible substrate.
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