Abstract:Researchers have been developing 2D materials (2DM) for electronics, which are widely considered a possible replacement for silicon in future technology. Two-dimensional transition metal dichalcogenides are the most promising among the different materials due to their electronic performance and relatively advanced development. Although field-effect transistors (FETs) based on 2D transition metal dichalcogenides have been found to outperform Si in ultrascaled devices, the comparison of 2DM-based and Si-based technologies at the circuit level is still missing. Here we compare 2DM- and Si FET-based static random-access memory (SRAM) circuits across various technology nodes from 16 nm to 1 nm and reveal that the 2DM-based SRAM exhibits superior performance in terms of stability, operating speed and energy efficiency when compared with Si SRAM. This study utilized technology computer-aided design to conduct device and circuit simulations, employing calibrated MoS 2 nFETs and WSe 2 pFETs. It incorporated layout design rules across various technology nodes to comprehensively analyse their SRAM functionality. The results show that, compared with three-dimensional structure Si transistors at 1 nm node, the planar 2DMFETs exhibited lower capacitance, leading to reduced cell read access time (−16%), reduced time to write (−72%) and lowered dynamic power (−60%). The study highlights the provisional benefits of using planar 2DM transistors to mitigate the performance degradation caused by reduced metal pitch and increased wire resistance in advanced nodes, potentially opening up exciting possibilities for high-performance and low-power circuit applications.

Simulation of 2D ReS2/WSe2 Based Complementary Field-Effect Transistors Towards 1 Nm Technology Node

2D Materials-Based Static Random-Access Memory

Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Tapping the Performance of a Tungsten Disulfide Field-Effect Transistor with Deep Structure Optimization and Theoretical Simulation

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

Performance Limit of Monolayer WSe₂ Transistors; Significantly Outperform Their MoS₂ Counterpart

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

In-plane Schottky-barrier field-effect transistors with a 4-nm channel based on 1T/2H MoTe<sub>2</sub> and WTe<sub>2</sub>

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

DFT Coupled with NEGF Study of N-Type MOSFET Based on 2D Planar B2S3 Semiconductor

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

A Simulation Study of SiGe Shell Channel CFET for Sub-2-nm Technology Nodes

Top-Gate CVD WSe2 Pfets with Record-High Id~594 Μa/μm, Gm~244 Μs/μm and WSe2/MoS2 CFET Based Half-adder Circuit Using Monolithic 3D Integration

Top-Gate CVD WSe2 pFETs with Record-High I-d similar to 594 mu A/mu m, G(m)similar to 244 mu S/mu m and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

Field-Effect Transistors based on 2-D Materials: a Modeling Perspective

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Top-Gate CVD WSe<inf>2</inf> pFETs with Record-High I<inf>d</inf>~594 μA/μm, G<inf>m</inf>~244 μS/μm and WSe<inf>2</inf>/MoS<inf>2</inf> CFET based Half-adder Circuit Using Monolithic 3D Integration

Ohmic MXene Contacts for Symmetric P- and N-Type Monolayer WSe2 Schottky Barrier Field-Effect Transistors

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors