Abstract:Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great attention in sub-nanometer devices. However, the poor current drivability limits its further application. In this article, a dual-doped Fin-RFET featuring a vertically stacked source/drain has been proposed for the first time. The 3-D TCAD simulations demonstrate its improved ON-state saturated current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{\mathrm {ON}}}}$ </tex-math></inline-formula> ) by 8.71 times for n-FET and 10.35 times for p-FET, compared with conventional SB-RFETs. A comprehensive study of physical dimensions and materials in the proposed device is performed for device optimization, including control gate length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {CG}}$ </tex-math></inline-formula> ), polarity gate length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {PG}}$ </tex-math></inline-formula> ), fin height ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${H}_{\text {Fin}}$ </tex-math></inline-formula> ), and spacer dielectric constant ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa _{\text {SP}}$ </tex-math></inline-formula> ). Various performance metrics have been taken for evaluation, such as ON-state current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{\mathrm {ON}}}}$ </tex-math></inline-formula> , OFF-state current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{\mathrm {OFF}}}}$ </tex-math></inline-formula> , maximum of transconductance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{\text {max}}$ </tex-math></inline-formula> , and cut-off frequency <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula> . The results of our work offer a valuable reference for the rational design of the proposed device according to diverse customized functions.

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Novel Reconfigurable Transistor with Extended Source/Drain Beyond 3 Nm Technology Node

Electrically Reconfigurable Dual Metal-Gate Planar Field-Effect Transistor for Dopant-free CMOS

Novel Reconfigurable Field-Effect Transistor with Surrounded Source/Drain to Improve On-State Current

Novel 3-D Fin-RFET With Dual-Doped Source/Drain to Improve ON-State Current

Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization

TCAD Simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve On-Current

Vertically Stacked Nanosheets Tree-Type Reconfigurable Transistor with Improved ON-Current

Electronic Assessment of Novel Arch-Shaped Asymmetrical Reconfigurable Field-Effect Transistor

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Dual Metal-Gate Planar Field-Effect Transistor for Electrostatically Doped CMOS Design

Top-down fabricated reconfigurable FET with two symmetric and high-current on-states

Invetigation of reconfigurable silicon nanowire Schottky Barrier transistors-based logic gate circuits and SRAM cell

Novel Reconfigurable Field-Effect Transistor with Arch-Shaped Gate to Improve On-State Current

Novel Reconfigurable Field-Effect Transistor with Asymmetric Spacer Engineering at Drain Side

Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

High performance tunnel field-effect transistor by gate and source engineering.

Channel-bias-controlled Reconfigurable Silicon Nanowire Transistors Via an Asymmetric Electrode Contact Strategy

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Performance Investigation on the Reconfigurable Si Nanowire Schottky Barrier Transistors