Abstract:Schottky barrier reconfigurable field effect transistors (SB-RFETs) have attracted great attention in sub-nanometer devices. However, the poor current drivability limits its further application. In this article, a dual-doped Fin-RFET featuring a vertically stacked source/drain has been proposed for the first time. The 3-D TCAD simulations demonstrate its improved ON-state saturated current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{\mathrm {ON}}}}$ </tex-math></inline-formula> ) by 8.71 times for n-FET and 10.35 times for p-FET, compared with conventional SB-RFETs. A comprehensive study of physical dimensions and materials in the proposed device is performed for device optimization, including control gate length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {CG}}$ </tex-math></inline-formula> ), polarity gate length ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${L}_{\text {PG}}$ </tex-math></inline-formula> ), fin height ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${H}_{\text {Fin}}$ </tex-math></inline-formula> ), and spacer dielectric constant ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa _{\text {SP}}$ </tex-math></inline-formula> ). Various performance metrics have been taken for evaluation, such as ON-state current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{\mathrm {ON}}}}$ </tex-math></inline-formula> , OFF-state current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ {{\mathrm {OFF}}}}$ </tex-math></inline-formula> , maximum of transconductance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${g}_{\text {max}}$ </tex-math></inline-formula> , and cut-off frequency <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f}_{T}$ </tex-math></inline-formula> . The results of our work offer a valuable reference for the rational design of the proposed device according to diverse customized functions.

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