Abstract:Recently, WS 2 has been considered a promising photodetector material due to its benefits of atomic thickness, easily customized single-crystal van der Waals heterostructure, and efficient photon absorption. However, the photosensitivity obtained from the WS 2 photodetector is still unsatisfactory. Therefore, this article proposes a WS 2 -based high sensitivity field-effect transistor (FET) based on avalanche multiplication. Under 532-nm illumination, WS 2 FET has ultralow dark current ( $10^{-{12}}$ A), high responsivity (74 A/W), and high detectivity ( $1.45\times 10^{{13}}$ Jones). In addition, the avalanche breakdown voltage of the device is reduced by employing graphene as an electrode. Because the height of the Schottky barrier can be reduced by replacing the Au electrode with a graphene electrode, the lower Schottky barrier can result in higher electric field intensity in the WS 2 channel. Meanwhile, the unique transfer and output characteristics are observed in WS 2 FET with graphene electrode. The inherent mechanisms are discussed, considering the Fermi-level tenability of graphene flakes and ambipolar transport properties of WS 2 . These results open a promising door to realize the WS 2 FET with low power consumption and ultrahigh photoresponsivity, which will be ideal for high-performance photodetectors.

ReS<sub>2</sub>Based FieldEffect Transistors and Photodetectors

ReS2‐Based Field‐Effect Transistors and Photodetectors

Electronic and Optoelectronic Applications Based on ReS2

Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Advances in MoS2-Based Field Effect Transistors (FETs)

MoS2/graphene Lateral Heterostructure Field Effect Transistors.

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Monolayer MoS2photodetectors with a Buried-Gate Field-Effect Transistor Structure.

Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications

High responsivity phototransistors based on few-layer ReS2 for weak signal detection

High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications

Multifunctional MoS2 Transistors with Electrolyte Gel Gating.

Field-Effect Transistors Based on Two-Dimensional Materials for Logic Applications

Dual-gated Single-Molecule Field-Effect Transistors Beyond Moore’s Law

Optoelectronic memory in 2D MoS2 field effect transistor

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Achieving nearly barrier free transport in high mobility ReS 2 phototransistors with van der Waals contacts

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts