Abstract:Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.

Monolayer MoS2photodetectors with a Buried-Gate Field-Effect Transistor Structure.

Modeling and simulation of high gain monolayer MoS<inf>2</inf> photodetector

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Scaling Analysis of High Gain Monolayer MoS 2 Photodetector for Its Performance Optimization

Highly Sensitive MoS2Photodetector Based on Charge Integration and Field-Coupled Effect

Lateral Multilayer/monolayer MoS2 Heterojunction for High Performance Photodetector Applications

Graphene Top-gated Mos2 Phototransistors

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2

Gate Stimulated High-Performance MoS2-In(OH) X Se Phototransistor.

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

A Gate-Free MoS2 Phototransistor Assisted by Ferroelectrics

High Performance MoS2 Phototransistors Photogated by PN Junction

Ultrahigh Photoresponsivity MoS2 Photodetector with Tunable Photocurrent Generation Mechanism.

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

An Ultrasensitive Gateless Photodetector Based on the 2D Bilayer MoS2-1D Si Nanowire-0D Ag Nanoparticle Hybrid Structure.

Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity

Dual-gate MoS2phototransistor with Atomic-Layer-deposited HfO2as Top-Gate Dielectric for Ultrahigh Photoresponsivity.

Visible To Near-Infrared Photodetectors Based On Mos2 Vertical Schottky Junctions

Graphene/MoS 2 /Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance

Dual-gate MoS 2 phototransistor with atomic-layer-deposited HfO 2 as top-gate dielectric for ultrahigh photoresponsivity

Highly Sensitive MoS2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode