Abstract:Two-dimensional transition metal dichalcogenide-based phototransistors have been intensively studied in recent years due to their high detection rate and flexibility. However, the photogating effect, usually appearing in the devices, leads to a poor transient photoresponse, which slows down the imaging rate of the camera based on the devices. Here, we demonstrate a dual-channel two-dimensional field-effect phototransistor composed of a vertical molybdenum disulfide (MoS2) p-n homojunction as the sensitizing channel layer. Owing to the effective separation by the vertical built-in electric field and rapid migration of photoexcited electrons and holes in the separated channels, the fabricated dual-channel FET device simultaneously exhibits prominent responsivity and greatly improved time response in comparison to the pristine MoS2 FET detectors. Excellent device performance has been achieved, with a responsivity of 3.4 × 104 A/W at a source-drain voltage (VDS) of 1 V, corresponding to a detectivity (D*) of 1.9 × 1013 Jones@532 nm and a gain of more than 105 electrons per photon, an external quantum efficiency of 9.6%, and a response time of tens of milliseconds. Especially, the response time of the dual-channel FET device is 3 orders of magnitude faster than that of the pristine device. Our results provide a new way to overcome the inherent photogating drawback of two-dimensional FET optoelectronic devices and to develop a related high frame rate imaging system.

Dual-gate MoS2phototransistor with Atomic-Layer-deposited HfO2as Top-Gate Dielectric for Ultrahigh Photoresponsivity.

Dual-gate MoS 2 phototransistor with atomic-layer-deposited HfO 2 as top-gate dielectric for ultrahigh photoresponsivity

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

MoS2/HfO2/Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

High-performance MoS2phototransistors with Hf1-xAlxO back-gate dielectric layer grown by plasma enhanced atomic layer deposition.

An ultrasensitive molybdenum-based double-heterojunction phototransistor

High-performance MoS2 Phototransistors with Hf1–x Al X O Back-Gate Dielectric Layer Grown by Plasma Enhanced Atomic Layer Deposition

Ultrahigh Photoresponsivity MoS2 Photodetector with Tunable Photocurrent Generation Mechanism.

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction.

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Graphene Top-gated Mos2 Phototransistors

Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

High‐Sensitivity Floating‐Gate Phototransistors Based on WS2 and MoS2

Gate Voltage Dependence Ultrahigh Sensitivity WS₂ Avalanche Field-Effect Transistor

SnS2/MoS2 Van Der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect.

Gate Stimulated High-Performance MoS2-In(OH) X Se Phototransistor.

An Ultrasensitive Gateless Photodetector Based on the 2D Bilayer MoS2-1D Si Nanowire-0D Ag Nanoparticle Hybrid Structure.

Junction Field‐Effect Transistors Based on PdSe 2 /MoS 2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity

High Performance MoS2 Phototransistors Photogated by PN Junction