Graphene/MoS 2 /Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance

Shan Gao,Ziqian Wang,Huide Wang,Fanxu Meng,Pengfei Wang,Si Chen,Yonghong Zeng,Jinlai Zhao,Haiguo Hu,Rui Cao,Zhongquan Xu,Zhinan Guo,Han Zhang
DOI: https://doi.org/10.1002/admi.202001730
IF: 5.4
2020-12-23
Advanced Materials Interfaces
Abstract:<p>Molybdenum disulfide (MoS<sub>2</sub>) is considered as a promising 2D material for optoelectronic applications due to its excellent electrical and optical properties. A semimetal material with zero bandgap, like graphene, can extend response range of MoS<sub>2</sub>‐based photodetectors to wider spectral region. Here, a graphene/MoS<sub>2</sub>/graphene vertical heterostructure is demonstrated, where Schottky barriers are formed between MoS<sub>2</sub> and graphenes. The introduction of graphene can effectively widen the working wavelength of the device from visible to IR range. Simultaneously, the shortened transmit distance for the photogenerated carriers between the source and drain electrodes in the vertical heterostructure leads to faster response speed compared with MoS<sub>2</sub>‐based photodetectors. Besides, the graphene/MoS<sub>2</sub>/graphene photodetector shows excellent performance with an enhanced responsivity of 414 A W<sup>−1</sup> at 532 nm and 376 A W<sup>−1</sup> at 2000 nm, and a broad working wavelength ranging from 405 to 2000 nm. These excellent performances prove that the design of graphene based vertical heterostructure can provide new ideas for the development of high‐performance photodetectors in future.</p>
materials science, multidisciplinary,chemistry
What problem does this paper attempt to address?
The paper aims to address the limitations of traditional photodetectors in terms of response range, response speed, and performance. Specifically, the researchers designed and fabricated a broadband high-performance photodetector based on a graphene/molybdenum disulfide (MoS₂)/graphene vertical heterostructure. By introducing graphene, this novel photodetector achieved the following improvements: 1. **Extended Operating Wavelength**: The zero bandgap characteristic of graphene allows the MoS₂-based photodetector to extend its operating wavelength from the visible light to the infrared region. 2. **Increased Responsivity**: At wavelengths of 532 nm and 2000 nm, the responsivity of this photodetector reached 414 A/W and 376 A/W, respectively, which is significantly higher than existing MoS₂-based photodetectors. 3. **Faster Response Speed**: Due to the shortened transport distance of photogenerated carriers in the vertical heterostructure, the response speed of this photodetector is relatively fast. These improvements make this photodetector highly promising for future development in high-performance optoelectronic devices.