Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector

Xu Kai-Qi,Xu Huang,Zhang Jia-Zhen,Wu Xiang-Dong,Yang Lu-Han,Zhou Jie,Lin Fang-Ting,Wang Lin,Chen Gang
DOI: https://doi.org/10.11972/j.issn.1001-9014.2020.05.001
2020-01-01
JOURNAL OF INFRARED AND MILLIMETER WAVES
Abstract:The low intrinsic absorption and the existence of the inherent defects hamper the monoatomic layer graphene from being a high-performance photoelectric material, which leads to the strategy to form heterostructure by combining graphene with semiconductor materials. In this work, a graphene/GaAs heterostructure based photodetector has been designed and fabricated, in which the two-dimensional electron gas arc enhanced to improve the photoresponse ability at the band of sub-millimeter and Terahertz (THz) wave ranging from 20 GHz to 0. 12 THz. Under 25 GHz radiation, the responsivity of photodetector at room temperature (RT) reaches 20. 6 V.W-1, with the response time of 9.8 mu s and the noise equivalent power (NEP) of 3. 2x10(10)W.Hz(-1/2) under a bias of 400 mV. At 0. 12 THz, the responsivity is determined to be 4.6 V.W-1, with the response time of 10 mu s. And a NEP of 1. 4x10(-9) W.Hz(-1/2) can be achieved under the bias of 400 mV. These results exhibit great application potential for the graphene/GaAs heterostructure based THz photodetectors.
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