Design and Integration of a Layered MoS 2 /GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Xinglai Zhang,Jing Li,Zongyi Ma,Jian Zhang,Bing Leng,Baodan Liu

DOI: https://doi.org/10.1021/acsami.0c11021

2020-09-22

Abstract:Molybdenum disulfide (MoS₂) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS₂-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS₂/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS₂ and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS₂/GaN p–n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS₂ flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS₂/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c11021?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c11021</a>.SEM images and thickness distribution of the Ga₂O₃ flakes; SEM images, thickness distribution, optical image, and photoresponse performance of the GaN flakes; AFM image and photoresponse curves of the MoS₂/GaN heterostructure; XRD, optical image, Raman spectrum, AFM image, and electrical and optoelectrical characterizations of the p-MoS₂ flake; and tables comparing the photoresponse performance of the MoS₂/GaN heterostructure photodetector with that of other MoS₂-based photodetectors (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c11021/suppl_file/am0c11021_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology