Abstract:Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M=Mo or, W and X=S or, Se) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device 'on' current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate Field Effect Transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.

Two-Dimensional Transition Metal Dichalcogenide Tunnel Field-Effect Transistors for Biosensing Applications

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Two-dimensional Nanomaterial-Based Field-Effect Transistors for Chemical and Biological Sensing

Multifunctional Integrated Biosensors Based on Two-Dimensional Field-Effect Transistors

WSe2 Negative Capacitance Field-Effect Transistor for Biosensing Applications

Transistors based on solution-processed 2D materials for chemical and biological sensing

WSe2 Negative Capacitance Field-Effect Transistor for Glucose Sensing

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Environmental Analysis with 2D Transition-Metal Dichalcogenide-Based Field-Effect Transistors

Two-dimensional transition metal dichalcogenides van der Waals heterojunctions with broken-gap for tunnel field-effect transistors applications

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source

2D Materials‐Based Field‐Effect Transistor Biosensors for Healthcare

Advances in 2d Based Field Effect Transistors as Biosensing Platforms: From Principle to Biomedical Applications

Field Effect Transistor Sensors Based on In‐Plane 1T′/2H/1T′ MoTe2 Heterophases with Superior Sensitivity and Output Signals

Nanomaterials-Based Field-Effect Transistor for Protein Sensing: New Advances

Solution-gated transistors of two-dimensional materials for chemical and biological sensors: status and challenges

Complementary Tunneling Transistors Based on WSe2/SnS2 Van Der Waals Heterostructure.

Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors