Achieving nearly barrier free transport in high mobility ReS 2 phototransistors with van der Waals contacts

Shubhrasish Mukherjee,Gaurab Samanta,Md Nur Hasan,Shubhadip Moulick,Ruta Kulkarni,Kenji Watanabe,Takashi Taniguchi,Arumugum Thamizhavel,Debjani Karmakar,Atindra Nath Pal

DOI: https://doi.org/10.1038/s41699-024-00507-3

IF: 10.516

2024-11-07

npj 2D Materials and Applications

Abstract:Focusing on Rhenium disulfide (ReS 2 ), a group VII transition metal di-chalcogenides (TMDC), being a promising contender system for future nanoelectronics and optoelectronics, here, we present an innovative pathway to experimentally achieve an almost barrier-free contact for the ReS 2 field effect transistors (FETs) by using few layered graphene as contact electrodes, further supported by comparative first-principles analysis. Such barrier-free contacts enable the observation of metal-to-insulator transition with enhanced room temperature carrier mobility up to 25 cm 2 /Vs, linear I ds -V ds characteristic down to 80 K, along with the reduction of 1/f noise by more than two orders of magnitude. We further demonstrate a highly responsive gate- tunable phototransistor (R > 10 6 A/W) at an illumination wavelength of 633 nm. This work demonstrates a straightforward strategy to unlock the full potential of ReS 2 for CMOS compatible future electronic and optoelectronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology