Abstract:Anti‐ambipolar behavior and polarization‐sensitive properties are achieved by sandwiching p‐GeSe in a MoTe2/MoS2 heterojunction, with a peak‐to‐valley current ratio of more than104, polarization ratio as high as 11.2, and noise spectral density as low as 1 fA Hz‐1/2. Photocurrent polarity reversal through external voltage modulation provides the basis for multifunctional integration applications. The ability to modulate the polarity of carrier transport and photo‐response in assembled heterostructure devices remains a huge challenge for the development of multifunctional optoelectronics. Herein, a polarity‐switchable and polarization‐sensitive photodetector is developed based on a van der Waals (vdW) MoTe2/GeSe/MoS2 sandwich heterostructure. By varying the gate voltage, an anti‐bipolar transfer characteristic is obtained with significant peak‐valley current ratio (PVCR) exceeding 104, showing the extraordinary potential to realize electronic functions in logic circuits. Under 635 nm laser irradiation, the device exhibits a gate‐controlled polarity transition of photocurrent, namely, the sign reversal of photocurrent occurs by changing the gate voltage. Furthermore, the device achieves broadband photovoltaic effect and high photodetection performance with responsivity (R) of 723 mA·W−1, noise spectral density (Sn) of 1 fA Hz−1/2, and specific detectivity (D*) of 2.3×1012 Jones in the absence of external bias, which greatly outperforms the MoTe2/MoS2 device. Leveraging the in‐plane anisotropic structure of GeSe, the device is also endowed with an additional capability of polarization‐sensing for linearly polarized laser, possessing a high polarization ratio (PR) value of 11.2. Thus, this work proposes an effective and facile strategy to realize the gate‐modulated polarity transition and polarization‐sensitive photodetection, offering a broad perspective for multifunctional integrated applications.

Modulating the Function of GeAs/ReS2 van der Waals Heterojunction with its Potential Application for Short‐Wave Infrared and Polarization‐Sensitive Photodetection

A van der Waals pn heterojunction with organic/inorganic semiconductors

Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

2D Reconfigurable van der Waals Heterojunction for Logic Gate Circuits and Wide-Spectrum Photodetectors via Sulfur Substitution and Band Matching

AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity

Enhanced Photodetection Performance of InBiSe3/ReS2 Polarization‐Sensitive Heterostructure Photodetectors

High-Performance Photodetector Based on the ReSe 2 /PtSe 2 van der Waals Heterojunction

An Ultrasensitive ReSe2/WSe2 Heterojunction Photodetector Enabled by Gate Modulation and its Development in Polarization State Identification

Gate‐Modulated Polarity Transition and Polarization‐Sensitive Photodetection Enabled by Sandwiching Anisotropic GeSe in vdW Heterojunction

Ferroelectric-tuned Van Der Waals Heterojunction with Band Alignment Evolution

Designing and Development of AsP–GeY (S; Se) In-Plane and van der Waals Heterojunction-Based Photonic Devices for Wavelength Tuning

Visible–infrared dual-band detection with a polarization sensitivity based on GeSe/Ge heterojunction field effect transistor

Fabrication of 1D Te/2D ReS2 Mixed-Dimensional Van Der Waals P-N Heterojunction for High-Performance Phototransistor.

High-performance self-driven ultraviolet-visible photodetector based on type-II WS2/ReSe2 van der Waals heterostructure

High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction

High Optoelectronic Performance of a Local-Back-gate ReS2/ReSe2 Heterojunction Phototransistor with Hafnium Oxide Dielectric.

Air-Stable GaSe/ReS 2 Heterojunctions for Self-Powered Polarization-Sensitive Photodetectors

Programmable WSe2/Ge Heterojunction Field‐Effect Transistor with Visible‐Infrared Wavelength‐Distinguishing Detection Capability

Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs

Van der Waals integration of phase-pure 2D perovskite sheets and GaAs nanowires for self-driven photodetector

Multilayer InSe-Te van der Waals heterostructures with ultrahigh rectification ratio and ultrasensitive photoresponse