Abstract:Van der Waals semiconductors, with ultrathin body thickness and dangling-bond-free surfaces, have been employed to fabricate a vast range of electronic and optoelectronic devices such as transistors, photodiodes and memories. The integration of these different functional elements into one single device, usually referred to as multifunctional device, has received great research attention in the recent years. In this work, we realized a multifunctional device, based on the van der Waals semiconductor Indium Selenide (InSe), which can work both as a high-quality Schottky diode with current rectification and photovoltaic characteristics and as a memory. By exploiting the all-dry deterministic transfer fabrication method, we deposited the 2D InSe channel onto pre-deposited graphite and platinum electrodes, whose theoretical work functions differ of similar to 1.0-1.4 eV. Thanks to a controllable InSe air passivation treatment, these devices, which start in a non-rectifying state with negligible electrodes-InSe barriers, gradually evolve into Schottky diodes, presenting a final sizeable Schottky barrier height of 556 +/- 50 meV at the Pt-InSe interface, thus resulting in a gradual tuning of the device photo-responsivity and photovoltaic parameters (such as the open circuit voltage V-oc). The multifunctional capabilities of these devices were demonstrated by using them as optoelectronic memories, which can achieve on-off ratios between the logical '1' and '0' up to 100 and retention times of thousands of seconds. This multifunctional behavior can be ascribed to the traps present in the system, which on one side influences the metal-semiconductor barriers and on the other introduces charge storage capabilities at the base of the memory operation. Our results demonstrate that trap state modulation can be an important tuning knob for thin InSe in the field of electronics and optoelectronics.

Reconfigurable InSe Electronics with van der Waals Integration

Multifunctional Indium Selenide Devices Based on Van Der Waals Contacts: High-quality Schottky Diodes and Optoelectronic Memories

Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

Doping-free Complementary WSe2 Circuit Via Van Der Waals Metal Integration

Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications

Comprehensive Polarity Regulation of WSe2 Field‐Effect Transistors Enabled by Combining Contact Engineering and Plasma Doping

Reconfigurable single-gate PdSe2/WS2 diode with high symmetry rectification

Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration

Controlling the Polarity of WSe<sub>2</sub> FETs by Interface Engineering for High-Gain CMOS

Contact and injection engineering for low SS reconfigurable FETs and high gain complementary inverters

Reversible charge-polarity control for photo-triggered anti-ambipolar In2Se3&WSe2 heterotransistor

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Controllable Carrier Transfer Modulation of Ambipolar Van Der Waals Semiconductors Toward Forksheet FETs

Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures

High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes

Picometer‐Level In Situ Manipulation of Ferroelectric Polarization in Van der Waals layered InSe

Gate‐Controlled Polarity‐Reversible Photodiodes with Ambipolar 2D Semiconductors

Reduction of the ambient effect in multilayer InSe transistors and a strategy toward stable 2D-based optoelectronic applications

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Nonvolatile Reconfigurable 2D Schottky Barrier Transistors