Abstract:Due to the reversed built‐in electric field of WTe2‐WS2 in darkness, the competition between WS2‐Cr and WTe2‐WS2 interface under illumination, an all‐2D Schottky junction reconfigurable phototransistor with polarity switching can be achieved. It exhibits reconfigurable rectification behavior and polarity conducting characteristics, bidirectional photovoltaic photocurrent, reconfigurable polarization photodetection, and non‐volatile photovoltaic properties for half‐wave rectifiers, optical logic circuits, and single‐pixel imaging. In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers. However, there has been a lack of investigation into all‐2D Schottky junctions used in RPT with polarity control behavior. Herein, a vertically stacked multilayered WS2/WTe2 Schottky RPT is reported. The semimetal characteristics of 1T'‐WTe2 is designed to form a built‐in electric field of 69 meV across the heterojunction and WS2 exhibits gate‐tunable characteristics. Therefore, reconfigurable rectifying behavior and self‐driven bidirectional photo response can be achieved. The phototransistor possesses a gate‐tunable rectification ratio ranging from 10−2 to 105, and the corresponding logic half‐wave rectifier shows excellent switchable rectifying states. Under 635 nm illumination, the responsivity can be adjusted from −1325 to 430 mA W−1 with reversed signs. Meanwhile, the maximum power conversion efficiency is 2.84%, and the specific detectivity is 1.47 × 1012 Jones. The device shows both negative and positive responsivity with linear gate dependence within a voltage window of 10 V. Impressively, nonvolatile photovoltaic performance can be demonstrated by reversing short‐circuit current and open‐circuit voltage by applying and releasing pulsed gate voltage. Finally, reconfigurable polarization behavior, single‐pixel imaging, and the optical logic circuit are applicable to the heterostructure.

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