Abstract:Electrically reconfigurable 2D semiconductor transistors are achieved using a facile in situ dielectric engineering method. Based on the integration of the permanent charge trapping effect and the transient voltage modulation capability, such transistors exhibit run‐time electrically configurable functionalities including non‐volatile memory, threshold voltage tunable logic switch, non‐volatile TCAM, and artificial synapse. The co‐integration of logic, memory, synapse, and other essential functionalities into one single element with run‐time reconfigurability is explored as a promising approach for an efficient and flexible in‐memory computing platform. However, despite ample research focused on such reconfigurable semiconductor technology, it remains challenging to achieve a CMOS‐compatible device concept that is with simplified device structure, versatile functionalities, and efficient operation schemes. Here, a new type of run‐time electrically reconfigurable device is demonstrated based on dielectric‐engineered 2D semiconductor transistors. With an engineered semiconductor/charge‐trap layer/dielectric film heterostructure, the 2D charge‐trap transistor (CTT) resembles a simplified metal‐oxide‐semiconductor field‐effect transistor (MOSFET) structure. Both multilevel permanent charge trapping and transient voltage‐modulating capabilities can be realized in the 2D CTTs, giving rise to various switchable device function modes including non‐volatile memory, threshold voltage‐variable logic switch, and artificial synapse. Leveraging the monolithic integration of multiple 2D CTTs and time‐sequential reconfigurable operation strategy, high‐performance logic inverter and non‐volatile ternary content‐addressable memory (TCAM) with compact architecture can be created. The performance of the 2D CTTs in synapse mode is evaluated with the simulation of the convolutional neural network, showing great potential for future neuromorphic computing hardware.

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device

Reconfigurable Nonvolatile Boolean Logic with One-Transistor-two-memristor for In-Memory Computing

Reconfigurable Logic and in‐Memory Computing Based on Electrically Controlled Charge Trapping in Dielectric Engineered 2D Semiconductor Transistors

Nonvolatile Logic Inverters Based on 2D CuInP2S6 Ferroelectric Field Effect Transistors

Highly Reconfigurable Logic‐In‐Memory Operations in Tunable Gaussian Transistors for Multifunctional Image Processing

Logic-in-memory based on an atomically thin semiconductor

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors

RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional Materials

Bi2O2Se-Based Memristor-Aided Logic

Low-Power Logic-in-Memory Complementary Inverter Based on p-WSe<sub>2</sub> and n-WS<sub>2</sub>

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Silicon–van der Waals heterointegration for CMOS-compatible logic-in-memory design

Reconfigurable Logic in Nanosecond Cu/GeTe/TiN Filamentary Memristors for Energy-Efficient In-Memory Computing

Scalable 2T2R Logic Computation Structure: Design from Digital Logic Circuits to 3-D Stacked Memory Arrays