Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Reconfigurable Logic-Memory Hybrid Device Based on Ferroelectric Hf0.5Zr0.5O2

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

Ferroelectrically-enhanced Schottky barrier transistors for Logic-in-Memory applications

Efficient Parallel Multi‐Bit Logic‐in‐Memory Based on a Ultrafast Ferroelectric Tunnel Junction Memristor

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe 2 for In‐Memory Computing

Low‐Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe2 for In‐Memory Computing

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Logic Compatible High-Performance Ferroelectric Transistor Memory

Nonvolatile Logic Inverters Based on 2D CuInP2S6 Ferroelectric Field Effect Transistors

Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures

Logic-in-memory based on an atomically thin semiconductor

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology.