Abstract:Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Complete Reconfigurable Boolean Logic Gates Based on One FeFET -One RRAM Technology

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

Memorable Logic Gate Based on Field Effect Oxide Resistive Switching Devices

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Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors

Nonvolatile reconfigurable sequential logic in a HfO 2 resistive random access memory array.

Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

FeFET-Based Logic-in-Memory Supporting SA-Free Write-Back and Fully Dynamic Access with Reduced Bitline Charging Activity and Recycled Bitline Charge

Efficient Parallel Multi‐Bit Logic‐in‐Memory Based on a Ultrafast Ferroelectric Tunnel Junction Memristor

Ge-based Non-Volatile Logic-Memory Hybrid Devices for NAND Memory Application

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

A Novel Capacitor-based Stateful Logic Operation Scheme for In-memory Computing in 1T1R RRAM Array

Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology.

Reprogrammable Logic in Memristive Crossbar for In-Memory Computing

FeFET-based low-power bitwise logic-in-memory with direct write-back and data-adaptive dynamic sensing interface