Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory Array

Wensheng Shen,Peng Huang,Mengqi Fan,Runze Han,Zheng Zhou,Bin Gao,Huaqiang Wu,He Qian,Lifeng Liu,Xiaoyan Liu,Xing Zhang,Jinfeng Kang
DOI: https://doi.org/10.1109/led.2019.2931947
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:Nonvolatile and cascadable stateful logic operations are experimentally demonstrated within a 1 k-bit one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) array, where NAND gates serve as the building blocks. A robust dual-gate-voltage operation scheme is proposed. The effects of the transistor ON logic operation and the robustness to device parameter variations are discussed. The parallel 4-bit bitwise XOR operation is experimentally implemented in the 1T1R array by cascading NAND gates. This letter presents a feasible approach to in-memory computing for large-scale circuits.
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