A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

Haitong Li,Peng Huang,Bin Gao,Bing Chen,Xiaoyan Liu,Jinfeng Kang

DOI: https://doi.org/10.1109/LED.2013.2293354

2014-01-01

Abstract:A SPICE model of oxide-based resistive random access memory (RRAM) for dc and transient behaviors is developed based on the conductive filament evolution model and is implemented in large-scale array simulation. The simulations of one transistor-one resistor RRAM array up to 16 kb with wire resistance (Rwire) and capacitance (Cwire) indicate that: 1) resistance-capacitance delay during RESET and leakage current during SET have significant impact on write operations; 2) with array size enlarging, the power dissipation increases during RESET but decreases during SET; and 3) the increased Rwire and Cwire lead to the degradation of high resistance state and the fluctuation of low resistance state, respectively.