Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array

Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

High Performance Hfox -Based Resistive Ram Devices and Its Temperature Dependent Switching

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Study on ion dynamics of hafnium oxide RRAM by electrode thermal effect

Sub-nanosecond Pulse Programming and Device Design Strategy for Analog Resistive Switching in HfOx-based Resistive Random Access Memory

Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power