Abstract:Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardware cryptography. For the full industrial development of these devices different simulation tools and compact models are needed in order to allow computer-aided design, both at the device and circuit levels. Most of the different RRAM models presented so far in the literature deal with temperature effects since the physical mechanisms behind RS are thermally activated; therefore, an exhaustive description of these effects is essential. As far as we know, no revision papers on thermal models have been published yet; and that is why we deal with this issue here. Using the heat equation as the starting point, we describe the details of its numerical solution for a conventional RRAM structure and, later on, present models of different complexity to integrate thermal effects in complete compact models that account for the kinetics of the chemical reactions behind resistive switching and the current calculation. In particular, we have accounted for different conductive filament geometries, operation regimes, filament lateral heat losses, the use of several temperatures to characterize each conductive filament, among other issues. A 3D numerical solution of the heat equation within a complete RRAM simulator was also taken into account. A general memristor model is also formulated accounting for temperature as one of the state variables to describe electron device operation. In addition, to widen the view from different perspectives, we deal with a thermal model contextualized within the quantum point contact formalism. In this manner, the temperature can be accounted for the description of quantum effects in the RRAM charge transport mechanisms. Finally, the thermometry of conducting filaments and the corresponding models considering different dielectric materials are tackled in depth.

Electro-Thermal Cosimulation of Vertical One-Transistor–One-Resistor (1T1R) Resistive Random Access Memory and Array

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Modeling and Simulation of an Improved Resistive Random Access Memory Array

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the “Thermal-House”

Signal Integrity Analysis for Resistive Random Access Memory Crossbar Array by Compact Model with Consideration of Electro-Thermal Coupling Effects

A Compact Model for Electro-Thermal Simulation of Resistive Random Access Memory With Graphene Electrode

On the Thermal Models for Resistive Random Access Memory Circuit Simulation

A New Analytical Electro-Thermal Model in 3D Resistive Switching Memory Arrays

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

Modeling and Simulation of RRAM with Carbon Nanotube Electrode

Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays

Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing

Circuit Modeling for RRAM-Based Neuromorphic Chip Crossbar Array with and Without Write-Verify Scheme.