Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays

Yandong Luo,W.Q. Chen,Mingzhuo Cheng,Wen-Yan Yin
DOI: https://doi.org/10.1109/TED.2016.2615864
IF: 3.1
2016-01-01
IEEE Transactions on Electron Devices
Abstract:Resistive random access memory (RRAM) is a promising candidate for next generation nonvolatile memory technology. In this paper, electrothermal simulation in 3-D RRAM arrays is performed by using our in-house developed finite difference algorithm, which is validated by comparing the simulated temperature distribution with its counterpart obtained by commercial software. Both crossbar RRAM array an...
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