Abstract:Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Electrothermal Characterization of Single-Walled Carbon Nanotube (SWCNT) Interconnect Arrays

Performance Analysis Of Carbon Nanotube Contacted Phase Change Memory By Finite Element Method

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

Low Power Phase Change Memory with Vertical Carbon Nanotube Electrode

Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Understanding of Thermal Engineering for Vertical Nanowire Phase-Change Random Access Memory Partially Wrapped by Low-Conductivity Layer

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Study of geometric effect on phase change random access memory

Thermal Expansion of Phase-Change Random Access Memory Cells

Exploiting nanoscale effects in phase change memories

Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory

Investigations On Non Volatile And Non Rotational Phase Change Random Access Memory

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Thermal analysis of nonvolatile and non rotation phase change memory cell