Abstract:Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change materials as well as their extreme conductivity dependence on both electric field and temperature into a set of self-consistently-solved thermoelectric and phase-field partial-differential equations. However, demonstrations of the ability of such models to match actual experimental results are rare. In addition, such PCM devices also require a so-called selector device - such as an Ovonic Threshold Switching (OTS) device - in series for proper memory operation. However, monolithic simulation of both the PCM and OTS selector device in a single simulation is largely absent from the literature, despite its potential value for material- and design-space explorations. It is the goal of this work to first characterize a PCM device in isolation against experimental data, then to demonstrate the qualitative behavior of a simulated OTS device in isolation and finally to perform a single monolithic simulation of the PCM + OTS device within the confines of a commercially available TCAD solver: GTS Framework.

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements

Fully Coupled Electrothermal Simulation of Large RRAM Arrays in the “Thermal-House”

Electrothermal Effects on Reliability of Vertical Resistive Random Access Memory Array by Parallel Computing

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Fully Coupled Electrothermal Simulation of Resistive Random Access Memory (RRAM) Array

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Modeling and Simulation of an Improved Resistive Random Access Memory Array

An Efficient Domain Decomposition Method in Multi-physics Simulation of Package Systems

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Contact Size Scaling Of A W-Contact Phase-Change Memory Cell Based On Numerical Simulation

Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention