Abstract:A phase change memory (PCM) model suitable for neuromorphic circuit simulations is developed. A crystallization ratio module is used to track the memory state in the SET process, and an active region radius module is developed to track the continuously varying amorphous region in the RESET process. To converge the simulations with bi-stable memory states, a predictive filament module is proposed using a previous state in iterations of nonlinear circuit matrix under a voltage-driven mode. Both DC and transient analysis are successfully converged in circuits with voltage sources. The spiking-time-dependent-plasticity (STDP) characteristics essential for synaptic PCM are successfully reproduced with SPICE simulations verifying the model & x2019;s promising applications in neuromorphic circuit designs. Further on, the developed PCM model is applied to propose a neuron circuit topology with lateral inhibitions which is more bionic and capable of distinguishing fuzzy memories. Finally, unsupervised learning of handwritten digits on neuromorphic circuits is simulated to verify the integrity of models in a large-scale-integration circuits. For the first time in literature an emerging memory model is developed and applied successfully in neuromorphic circuit designs, and the model is applicable to flexible designs of neuron circuits for further performance improvements.

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Simulation of Retention Behavior for the Phase Change Memory

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

A SPICE Model of Phase Change Memory for Neuromorphic Circuits

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory

Exploiting nanoscale effects in phase change memories

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

A Compact Phase Change Memory Model With Dynamic State Variables

Revisiting the Crystallization Model of Phase Change Memory with Ab Initio Simulations

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

Unlocking device-scale atomistic modelling of phase-change memory materials

Compact Modeling of Phase Change Memory with Parameter Extractions

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Microstructure characterization, phase transition, and device application of phase-change memory materials

Nano-composite phase-change antimony thin film for fast and persistent memory operations