Abstract:Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

Revisiting the Crystallization Model of Phase Change Memory with Ab Initio Simulations

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

A New Model of Phase Change Process for Thermal Energy Storage

A Compact Phase Change Memory Model With Dynamic State Variables

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

A SPICE Model of Phase Change Memory for Neuromorphic Circuits

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Unlocking device-scale atomistic modelling of phase-change memory materials

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

RESET modeling of PCM using thermal budget approach

A compact model for phase change memory based on carrier transport mechanism

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Atomistic simulation of phase change memory during switching

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices