Abstract:Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation energy. The threshold switching mechanism is then explained by the nonequilibrium population in high-mobility shallow traps at high electric field and by the nonuniform field distribution along the amorphous layer thickness. A single analytical model is then shown which is able to account for subthreshold conduction, threshold switching, negative differential resistance region, and ON regime. The model can be applied for fast yet physically based computation of the current in chalcogenide-based devices (e.g., phase change memory cells and arrays) as a function of applied voltage, temperature, and programmed state.

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

A compact model for phase change memory based on carrier transport mechanism

An Improved SPICE Model of Phase-Change Memory (PCM) for Peripheral Circuits Simulation and Design

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

A Compact Phase Change Memory Model With Dynamic State Variables

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

A Phase Change Memory SPICE Model Adaptable to Different Device Geometry

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Verilog-A model for phase change memory simulation

A SPICE Model of Phase Change Memory for Neuromorphic Circuits

Universal HSPICE model for chalcogenide based phase change memory elements

Contact Size Scaling Of A W-Contact Phase-Change Memory Cell Based On Numerical Simulation

Modeling active dimension for phase change memory cell

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

A Field-Induced Threshold Switching Model of Phase-Change Memory

Revisiting the Crystallization Model of Phase Change Memory with Ab Initio Simulations

A Compact Diode Array Model for Phase Change Memory Application

Thermal Modeling And Simulation Of Nonvolatile And Non-Rotating Phase Change Memory Cell

Phase-Change Memory Reset Model Based on Detailed Cell Cooling Profile

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices