Abstract:Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)-based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.

Phase-Change Memory Reset Model Based on Detailed Cell Cooling Profile

RESET modeling of PCM using thermal budget approach

A Compact Phase Change Memory Model With Dynamic State Variables

A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Modeling the Gradual RESET of Phase Change Memory with Confined Geometry

Verilog-A model for phase change memory simulation

3-D Resistance Model for Phase-Change Memory Cell

A compact model for phase change memory based on carrier transport mechanism

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

Thermal Analysis and Structural Design of Phase Change Random Access Memory

Thermal Expansion of Phase-Change Random Access Memory Cells

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Thermal Modeling And Simulation Of Nonvolatile And Non-Rotating Phase Change Memory Cell

Interface Engineering to Enhance Phase Change Memory Programmability

A High Speed Asymmetric T-Shape Cell in Nmos-Selected Phase Change Memory Chip

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Atomistic simulation of phase change memory during switching

Investigation on non-rotating and non-volatile phase change memory