Abstract:This review focuses on the emerging reversible crystalline‐to‐crystalline phase transitions in phase‐change materials. It delves into the atomic structures and switching mechanisms of these atypical transitions, provides insights into their thermodynamic and kinetic features, and offers an outlook on the opportunities for developing novel phase‐change memory devices and on challenges that need to be addressed. Phase‐change random access memory (PCRAM) is one of the most technologically mature candidates for next‐generation non‐volatile memory and is currently at the forefront of artificial intelligence and neuromorphic computing. Traditional PCRAM exploits the typical phase transition and electrical/optical contrast between non‐crystalline and crystalline states of chalcogenide phase‐change materials (PCMs). Currently, traditional PCRAM faces challenges that vastly hinder further memory optimization, for example, the high‐power consumption, significant resistance drift, and the contradictory nature between crystallization speed and thermal stability, nearly all of them are related to the non‐crystalline state of PCMs. In this respect, a reversible crystalline‐to‐crystalline phase transition can solve the above problems. This review delves into the atomic structures and switching mechanisms of the emerging atypical crystalline‐to‐crystalline transitions, and the understanding of the thermodynamic and kinetic features. Ultimately, an outlook is provided on the future opportunities that atypical all‐crystalline phase transitions offer for the development of a novel PCRAM, along with the key challenges that remain to be addressed.

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

A Field-Induced Threshold Switching Model of Phase-Change Memory

Investigation on non-rotating and non-volatile phase change memory

A Robust and Efficient Compact Model for Phase-Change Memory Circuit Simulations

Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Threshold Switching Uniformity In In2se3 Nanowire-Based Phase Change Memory

Hot-carrier trap-limited transport in switching chalcogenides

A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect

Investigation of Nano-Phase Change for Phase Change Random Access Memory

A Compact Phase Change Memory Model With Dynamic State Variables

Atomistic simulation of phase change memory during switching