Abstract:As a non-volatile semiconductor memory technology, phase-change memory has a wide range of application prospects as a result of the excellent comprehensive performance. In this paper, multilayer thin films based on Sb2Te3 material were designed and prepared by inserting the Sn15Sb85 layer. The thermal and electrical properties of superlattice-like Sb2Te3/Sn15Sb85 phase-change films can be adjusted by controlling the thickness ratio of Sb2Te3/Sn15Sb85. In comparison to the monolayer Sb2Te3 film, the multilayer layer Sb2Te3/Sn15Sb85 materials have a higher crystallization temperature, larger crystallization activation energy, and longer data lifetime, indicating the great improvement of thermal stability. The changes in the phase structure and vibrational modes of multilayer Sb2Te3/Sn15Sb85 films were characterized by X-ray diffraction and Raman spectroscopy, respectively. The presence of Sn15Sb85 layers restrains grain growth and refines the grain size. The multilayer Sb2Te3/Sn15Sb85 films exhibit better surface flatness, smaller surface potential undulation, and lower thickness variations than single-layer Sb2Te3. Phase-change memory cells based on the [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 thin film has a lower threshold voltage (1.9 V) and threshold current (3.1 μA) compared to the Ge2Sb2Te5 film. Meanwhile, the electrical heating model of a phase-change memory cell based on a [Sb2Te3 (1 nm)/Sn15Sb85 (9 nm)]5 multilayer structure was established by multiphysics coupling analysis, proving the great improvement in heat transfer performance and efficiency. The experimental and theoretical studies confirm that the insertion of the Sn15Sb85 layer can significantly improve the crystallization properties of Sb2Te3 films, paving the way for optimizing the phase-change materials by regulating the microstructural parameters.

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Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

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Investigation on non-rotating and non-volatile phase change memory

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

A Microscopic Explanation for Picosecond Amorphization of Chalcogenides Material

Low Thermal Conductivity in Ge2Sb2Te5–SiOx for Phase Change Memory Devices

Picosecond Amorphization of Chalcogenides Material: from Scattering to Ionization

Modeling Heterogeneous Melting in Phase Change Memory Devices

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb2Te3 Phase-Change Thin Film by Inserting Sn15Sb85 Layers.

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

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Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices