Abstract:[GeTe]m-[Sb2Te3]n superlattice (GST-SL) is a promising material candidate to solve the critical problem of high-power consumption for phase-change memory technology. However, the switching mechanism is still under strong debate during the last decade. A key controversial question is that whether melting in GST-SL is possible. In this work, a large-scale machine learning interatomic potential (MLIP) molecular dynamics (MD) simulation with a one-order-of-magnitude larger atom number than that of conventional density functional theory (DFT) MD captures a unique partial melting behavior in GST-SL, where a sparse-nucleation-and-growth governed melting behavior is triggered by the flipping of atoms into van der Waals (vdW) gaps and forming cation-in-vdW-gap (CiV) defect as starting point, and then is slowly developed via propagating liquid-crystalline interfaces. In great contrast, the traditional melting of rock salt (RS)-GST occurs very fast due to instant homogeneous nucleation from high-density intrinsic vacancies distributed randomly in its cubic lattice. Therefore, the melting regions in GST-SL can be spatially localized in form of partial melting and are readily controlled. Moreover, the atomic distribution after melting in GST-SL is more chemical ordering than that in RS-GST. By the large-scale MLIP-MD, the present study provides a critical atomic insight into GST-SL phase-change behaviors that conventional DFT-MDs hardly achieve. This partial-melting nature in GST-SL helps explain the long-term-confused working principle of GST-SL-based phase-change memory, which will accelerate its application in the big-data era.

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Hot-carrier trap-limited transport in switching chalcogenides

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

Transition from Junction Limited to Bulk Limited Subthreshold Conduction in Phase Change Memory

Investigation on non-rotating and non-volatile phase change memory

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

Modeling Heterogeneous Melting in Phase Change Memory Devices

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

A SPICE Model for a Phase-Change Memory Cell Based on the Analytical Conductivity Model

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

A Field-Induced Threshold Switching Model of Phase-Change Memory

Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

Universal HSPICE model for chalcogenide based phase change memory elements

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics