Abstract:Chalcogenide materials are receiving increasing interest for their many applications as active materials in emerging memories, such as phase-change memories, programmable metallization cells, and cross-point devices. The great advantage of these materials is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. The aim of this work is to provide a physically based model for conduction in the amorphous chalcogenide material, able to predict the current-voltage (I−V) characteristics as a function of phase state, temperature, and cell geometry. First, the trap-limited transport at relatively low currents (subthreshold regime) is studied, leading to a comprehensive model for subthreshold conduction accounting for (a) the shape of the I−V characteristics, (b) the measured temperature dependence, (c) the dependence of subthreshold slope on the thickness of the amorphous phase, and (d) the voltage dependence of the activation energy. The threshold switching mechanism is then explained by the nonequilibrium population in high-mobility shallow traps at high electric field and by the nonuniform field distribution along the amorphous layer thickness. A single analytical model is then shown which is able to account for subthreshold conduction, threshold switching, negative differential resistance region, and ON regime. The model can be applied for fast yet physically based computation of the current in chalcogenide-based devices (e.g., phase change memory cells and arrays) as a function of applied voltage, temperature, and programmed state.

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

A Field-Induced Threshold Switching Model of Phase-Change Memory

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Hot-carrier trap-limited transport in switching chalcogenides

Transition from Junction Limited to Bulk Limited Subthreshold Conduction in Phase Change Memory

Universal HSPICE model for chalcogenide based phase change memory elements

A model for ovonic threshold switch of amorphous GST based on hopping transport process

A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

A Compact Phase Change Memory Model With Dynamic State Variables

A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Study on nucleation characteristic of phase change memory set operation using numerical simulation

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

A compact model for phase change memory based on carrier transport mechanism

Scaling Behavior of PCM Cells in Off-State Conduction