Abstract:In this work, the thermal and electrical performances of chalcogenide-based phase change memory cell were investigated. We have investigated the current reduction issue for CRAM cell theoretically and experimentally. It was found that the value of programming current is highly dependent on the materials and device structure. The effects of materials and cell geometry, structure, and size on thermal and electrical properties of memory cell were simulated and analyzed. The dependence of the memory cell performance on the configuration of memory medium and the cell size were also studied by means of simulation and experiments. An effective method has been proposed to predict the RESET and SET programming current for memory cell. A new structure phase change memory cell was proposed, fabricated and tested. The measurement showed that the memory cell could work at low current.

Study on nucleation characteristic of phase change memory set operation using numerical simulation

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

A Three-Dimensional Numerical Simulator of Phase-Change Memory by Random Nucleation and Growth Approach

Numerical simulation of programming and read process for nano-scale phase-change memory (PCM) cell

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Atomistic simulation of phase change memory during switching

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Investigation on non-rotating and non-volatile phase change memory

Interface Engineering to Enhance Phase Change Memory Programmability

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory

Contact Size Scaling Of A W-Contact Phase-Change Memory Cell Based On Numerical Simulation

Simulation of Program Characteristics of Nanocrystal Flash Memory Devices

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Thermal Modeling And Simulation Of Nonvolatile And Non-Rotating Phase Change Memory Cell

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

A Smooth And Continuous Phase Change Memory Spice Model For Improved Convergence

RESET modeling of PCM using thermal budget approach

A Field-Induced Threshold Switching Model of Phase-Change Memory

Simulation of Retention Behavior for the Phase Change Memory