Abstract:This review focuses on the emerging reversible crystalline‐to‐crystalline phase transitions in phase‐change materials. It delves into the atomic structures and switching mechanisms of these atypical transitions, provides insights into their thermodynamic and kinetic features, and offers an outlook on the opportunities for developing novel phase‐change memory devices and on challenges that need to be addressed. Phase‐change random access memory (PCRAM) is one of the most technologically mature candidates for next‐generation non‐volatile memory and is currently at the forefront of artificial intelligence and neuromorphic computing. Traditional PCRAM exploits the typical phase transition and electrical/optical contrast between non‐crystalline and crystalline states of chalcogenide phase‐change materials (PCMs). Currently, traditional PCRAM faces challenges that vastly hinder further memory optimization, for example, the high‐power consumption, significant resistance drift, and the contradictory nature between crystallization speed and thermal stability, nearly all of them are related to the non‐crystalline state of PCMs. In this respect, a reversible crystalline‐to‐crystalline phase transition can solve the above problems. This review delves into the atomic structures and switching mechanisms of the emerging atypical crystalline‐to‐crystalline transitions, and the understanding of the thermodynamic and kinetic features. Ultimately, an outlook is provided on the future opportunities that atypical all‐crystalline phase transitions offer for the development of a novel PCRAM, along with the key challenges that remain to be addressed.

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

A Field-Induced Threshold Switching Model of Phase-Change Memory

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Physics-Based Analytical Model of Chalcogenide-Based Memories for Array Simulation

Electrothermal Coupling and Threshold-Switching Simulation Study on Phase Change Memory (PCM) Cell

Chalcogenide Ovonic Threshold Switching Selector

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

Microscopic Origin of Polarity‐Dependent VTH Shift in Amorphous Chalcogenides for 3D Self‐Selecting Memory

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

A model for ovonic threshold switch of amorphous GST based on hopping transport process

Universal HSPICE model for chalcogenide based phase change memory elements

Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect

A Compact Phase Change Memory Model With Dynamic State Variables

A3-D Simulation Model and Study of Priming Effect for Phase Change Memory

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Chalcogenide Selector Devices and Their Non-Linear Conduction Process