Abstract:The pressure‐driven ab initio molecular dynamics simulations elucidate the underlying relationship between the chemical bonding and electronic states in chalcogenide glasses. Changing the dopants and stoichiometry could tailor the hypervalent bonds and the number of defect states, thus enabling comprehensive control in the development of innovative electrical switching materials for 3D phase change memory (PCM) chips. Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid‐gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium‐range clusters that break the global octet rule, such as over‐coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over‐coordinated clusters fails to generate mid‐gap states, which are probably caused by hypervalent bonding, a multi‐centered covalent bond participated by delocalized lone‐pair electrons. This is confirmed by the pressure‐driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over‐coordinated medium‐range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid‐gap states and consequently the performance of PCM and OTS materials. These results reveal the origin of mid‐gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.

Structural Changes During the Switching Transition of Chalcogenide Selector Devices

Materials Selection and Mechanism of Non-linear Conduction in Chalcogenide Selector Devices.

Chalcogenide Selector Devices and Their Non-Linear Conduction Process

Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching

Electronic and Electrothermal Switching Dynamics in Chalcogenide-Based Phase-Change Memory (Pcm)

Sb‐Se‐based Electrical Switching Device with Fast Transition Speed and Minimized Performance Degradation Due to Stable Mid‐gap States

Three-dimensional Ovonic Threshold Switching Model with Combination of In-Band and Trap-to-band Hopping Mechanism for Chalcogenide-Based Phase-Change Memory

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

Analytical Model for Subthreshold Conduction and Threshold Switching in Chalcogenide-Based Memory Devices

Structural Features of Chalcogenide Glass SiTe: an Ovonic Threshold Switching Material

Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

Role of Ge Switch in Phase Transition: Approach Using Atomically Controlled Gete/Sb2te3 Superlattice

A Physical Model of Ovonic Threshold Switching Effect for Phase Change Memory Based on the Trap-to-band Transition Mechanism

The role of arsenic in the operation of sulfur-based electrical threshold switches

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Intensive Structural Disorder Induces Electronic Delocalization: Amorphous Solid‐Liquid Transition in Ovonic Threshold Switching Materials

Transient Structural Transition in Ovonic Threshold Switching Glass

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

The Investigations of Characteristics of GeSe Thin Films and Selector Devices for Phase Change Memory