Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Role of Ge Switch in Phase Transition: Approach Using Atomically Controlled Gete/Sb2te3 Superlattice

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Electronic and Thermal Properties of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ Superlattices by ab-initio Approach: Impact of Van der Waals Gaps on Vertical Lattice Thermal Conductivity

Native Filament-to-dielectric Interfaces in Phase Change Superlattice Memories

Internal Reverse-Biased P–n Junctions: A Possible Origin of the High Resistance in Chalcogenide Superlattice for Interfacial Phase Change Memory

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

Metal–insulator transition in ScxSb2Te3 phase-change memory alloys

Configuration Effects of Superlattice‐like Phase Change Material Structure

In situ atomic-scale observation of transformation from disordered to ordered layered structures in Ge-Sb-Te phase change memory thin films

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

Direct observation of structural transitions in the phase change material Ge2Sb2Te5

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Manipulation of Dangling Bonds of Interfacial States Coupled in GeTe-rich GeTe/Sb2Te3 Superlattices

In‐Plane Twinning Defects in Hexagonal GeSb 2 Te 4

Low Thermal Conductivity Phase Change Memory Superlattices