Abstract:Ge-Sb-Te-based phase-change memory is one of the most promising candidates to succeed the current flash memories. The application of phase-change materials for data storage and memory devices takes advantage of the fast phase transition (on the order of nanoseconds) and the large property contrasts (e.g., several orders of magnitude difference in electrical resistivity) between the amorphous and the crystalline states. Despite the importance of Ge-Sb-Te alloys and the intense research they have received, the possible phases in the temperature-pressure diagram, as well as the corresponding structure-property correlations, remain to be systematically explored. In this study, by subjecting the amorphous Ge(2)Sb(2)Te(5) (a-GST) to hydrostatic-like pressure (P), the thermodynamic variable alternative to temperature, we are able to tune its electrical resistivity by several orders of magnitude, similar to the resistivity contrast corresponding to the usually investigated amorphous-to-crystalline (a-GST to rock-salt GST) transition used in current phase-change memories. In particular, the electrical resistivity drops precipitously in the P = 0 to 8 GPa regime. A prominent structural signature representing the underlying evolution in atomic arrangements and bonding in this pressure regime, as revealed by the ab initio molecular dynamics simulations, is the reduction of low-electron-density regions, which contributes to the narrowing of band gap and delocalization of trapped electrons. At P > 8 GPa, we have observed major changes of the average local structures (bond angle and coordination numbers), gradually transforming the a-GST into a high-density, metallic-like state. This high-pressure glass is characterized by local motifs that bear similarities to the body-centered-cubic GST (bcc-GST) it eventually crystallizes into at 28 GPa, and hence represents a bcc-type polyamorph of a-GST.

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics

Metal-Insulator Transition of Ge-Sb-Te Superlattice: an Electron Counting Model Study

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Low Thermal Conductivity Phase Change Memory Superlattices

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Evolution of Short- and Medium-Range Order in the Melt-Quenching Amorphization of Ge2Sb2Te5

Pressure-induced Reversible Amorphization and an Amorphous–amorphous Transition in Ge 2 Sb 2 Te 5 Phase-Change Memory Material

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Modeling Heterogeneous Melting in Phase Change Memory Devices

Phase‐Change Superlattice Materials Toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy

Ab initio molecular dynamics and materials design for embedded phase-change memory

Ultrafast Switching in Nanoscale Phase-Change Random Access Memory with Superlattice-Like Structures

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films

Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses

A Nano-Scale-Sized 3d Element for Phase Change Memories