Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Growth-Dominant Superlattice-Like Medium and Its Application in Phase Change Memory

Configuration Effects of Superlattice‐like Phase Change Material Structure

Low Thermal Conductivity Phase Change Memory Superlattices

Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30Super-Lattice Like Structure

Superlatticelike Dielectric As A Thermal Insulator for Phase-Change Random Access Memory

Designing multiple crystallization in superlattice-like phase-change materials for multilevel phase-change memory.

Phase Change Random Access Memory Cell With Superlattice-Like Structure

Edge Contact Lateral Phase Change Ram With Superlattice-Like Phase Change Medium

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Partial Melting Nature of Phase-Change Memory Ge-Sb-Te Superlattice Uncovered by Large-Scale Machine Learning Interatomic Potential Molecular Dynamics

Compositionally Matched Nitrogen-Doped Ge2Sb2Te5/Ge2Sb2Te5 Superlattice-Like Structures for Phase Change Random Access Memory

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Ultrafast Switching in Nanoscale Phase-Change Random Access Memory with Superlattice-Like Structures

A Nano-Scale-Sized 3d Element for Phase Change Memories

Ga<sub>2</sub>Te<sub>3</sub>Sb<sub>5</sub>-A Candidate for Fast and Ultralong Retention Phase-Change Memory

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Improvement of the thermal efficiency of Ge2Sb2Te5-based device by ultrathin carbon nanolayers

Nano Superlattice-like Materials As Thermal Insulators for Phase-Change Random Access Memory